并且建立了溶出伏安法测定Bi(III)的方法
) 摘要: 该文研制了1-(2-吡啶偶氮)-2-萘酚(PAN)修饰碳糊电极(CMCPE)
bismuth(III) 下载PDF阅读器 PDF全文下载: 修改稿 1( 82 ) 初稿 ( 180 ) 作者简介: 通信联系人: 【收录情况】 中国科技论文在线: 周益辉
1-(2-吡啶偶氮)-2-萘酚(PAN)修饰碳糊电极测定痕量铋[EB/OL]
北京:中国科技论文在线
) Abstract: A 1-(2-Pyridylazo)-2-naphthol modified carbon paste electrode(CMCPE)was fabricated and a stripping Voltammetric procedure for determination of trace bismuth(III)
In a 1
0×10-4mol/L HCl base solution
在0
2V左右出现一灵敏的铋溶出峰
溶出伏安法
关键词: 1-(2-吡啶偶氮)-2-萘酚(PAN)
a sensitive stripping peak of bismuth(III) was obtioned at about 0
2V
The second-order derivative peak height is directly proportional to the concentration of bismuth(III) over the range from 1
0×10-7mol/L to 1
0×10-4mol/L
The eqµation is ip(μA) = 3
9604c (10-6mol/L) + 0
0562
碳糊修饰电极
with a correlation coefficient of 0
9968
The detection limit for bismuth(III) was as low as 1
0×10-7mol/L
The proposed method has been used in the determination of trace amounts of bismuth(III) inmedicines for stomach diseases
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