在 AlN 和 GaN 中都是可能的
关键词： 声学极化子, 自陷, 二维电子-声子相互作用 Hou Jun-Hua
梁希侠
二维声学极化子自陷的可能性[EB/OL]
北京：中国科技论文在线
二维自陷出现的临界耦合常数远小于三维的相应值．运用本文理论对几种实际材料电子自陷的可能性进行判断指出: 二维电子自陷的观测
并用于计算声学极化子基态能量．文中同时获得二维和三维声学极化子能量的数值结果．其中三维结果与前人用费曼路径积分获得的结果吻合．研究发现：在同样的截止波矢下
） 摘要： 本文导出一种二维电子-纵声学声子相互作用哈密顿量
） Abstract： A two-dimensional (2D) electron-longitudinal acoustic-phonon interaction Hamiltonian is derived and used to calculate the ground-state energy of the acoustic polarons in two dimensions
The numerical results for the ground-state energy of the acoustic polarons in 2D as well as 3D are obtained
The results of three dimensions are found to be comparable to the results of Feynman path-integral approach
It is found that the critical coupling constant, at which the self-trapping occurs, in 2D is much smaller than that in 3D within the given cutoff wave-vector
The theory has been used to judge the possibility of self-trapping for several real materials
The results indicate that the self-trapping of the electrons in AlN as well as the holes in AlN and GaN is expected to be observed in 2D systems
Keywords： acoustic polarons, self-trapping, two-dimensional electron-phonon interaction 下载PDF阅读器 PDF全文下载： 初稿 （ 359 ） 作者简介： 通信联系人： 【收录情况】 中国科技论文在线： 侯俊华
