集成电路 通信联系人： 【收录情况】 中国科技论文在线： 陈燊林
电压对比检验方法检测和研究PMOS漏电流[EB/OL]
北京：中国科技论文在线
本文把电压对比检验方法成功应用于40纳米CMOS工艺缺陷检测分析
使得那些产生在工艺制造过程中难以光学检测的缺陷例如PMOS器件漏电缺陷检测得以被快速检测确定
关键词： 电压对比检测;光阻位移;PMOS漏电流 Chen Shenlin * （ Shanghai Huali Microelectronics Corporation
显示电压对比检测手段在芯片制造生产线上直接进行缺陷检测分析的巨大优势
经过随后工艺流程中的一系列工艺改进措施包括优化光刻光罩和重新定制NP光阻线宽尺寸等快速地解决由此缺陷产生的产品良率问题
） 摘要： 本文研究针对内联检测一些看不见的缺陷
） Abstract： The study was aimed at the inline detection of the invisible defects lead to end-of-the-line (EOL) data retention soft bin failure
The voltage contrast (VC) inspection was adopted to detect the leakage defects during the technology development of 40nm node wafers
The VC inspection found PMOS leakage by the improper implantation (IMP) of N+ source/drain (NP S/D), which would cause EOL yield loss by data retention soft bin failure
This is a process integration problem which involves the overlay performance of NP S/D photo, the critical dimension (CD) of the photo resist (PR) and the shrinkage of the PR by IMP process
The PMOS leakage was fixed by a series of process improvement actions including the optimization of the optical proximity correct (OPC) for the NP photo mask, to re-target the CD
Instead of EOL CP test, the actions all can be inline verified by the VC inspection with large time advantage
Keywords： voltage contrast; overlay; PMOS leakage 下载PDF阅读器 PDF全文下载： 初稿 （ 0 ） 作者简介： 陈燊林（1988-10-14）
总览 评价 陈燊林 * （ 上海华力微电子有限公司
