Chen Quan 4, （ 1、 Xi’an Jiaotong University
刘刚 3
Liu Gang 3,
Guo Gang 4,
） Abstract： 64K silicon-on-insulator (SOI) SRAMs were exposed to different heavy ions, Cu, Br, I, Kr
Experiment results show that the heavy ion single event upset(SEU) threshold Linear Energy Transfer (LET) in the 64K SOI SRAMs is about 71
8 MeV
cm2/mg
According to the experimental results, the single-event upset rate（SEUR）in space orbits are calculated and they are at the order of 10-13 upset/(day
bit)
Keywords： SOI SRAM; single event upset, single event upset rate; space radiation
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