其中InxGa1-xP组分渐变缓冲层的生长温度为450oC、生长时间为500s、厚度约为250nm
） 摘要： 理论分析了组分渐变缓冲层中错配位错和穿透位错的产生机理和二者之间的关系
采用低温GaAs与低温组分渐变InxGa1-xP作为缓冲层
通过在InP/GaAs外延层中插入生长一层厚为48nm的In0
53Ga0
47As
组分渐变缓冲层
通过双晶X射线衍射(DCXRD)测得InP外延层(004)晶面ω-2θ扫描及ω扫描的半高全宽分别为380
5弧秒和446
2弧秒
） Abstract： The formation mechanism and the relation of misfit dislocation and threading dislocation in the graded buffer were analyzed
The low temperature GaAs and graded InxGa1-xP buffers were adopted to grow InP on GaAs (001) substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD)
the growth temperature (Tg) and ramp time of InxGa1-xP graded buffer are 450oC and 500s respectively
The thickness of InP epilayer is 1
2μm
InP/GaAs heteroepitaxial sample was tested with Double Crystal X-Ray Diffraction (DCXRD), and the FWHM of ω-2θ and ω scans are 380
5arcsec and 446
2arcsec respectively
The result of calculation indicates that the density of threading dislocation is 7
2×108cm-2
48nm In0
53Ga0
47As layer was grown inside the InP epilayer under optimum growth conditions, the room temperature photoluminescence (PL) spectra shows that the band-edge emissions is 1643nm, and its FWHM is 60meV
Keywords： heteroepitaxy;InP/GaAs;low pressure MOCVD;graded buffer;InxGa1-xP 下载PDF阅读器 PDF全文下载： 初稿 （ 171 ） 作者简介： 通信联系人： 【收录情况】 中国科技论文在线： 刘红兵
InP/GaAs异质外延低温InGaP组分渐变缓冲层中的位错和应变研究[EB/OL]
