根据电流-电压（I-V）特性曲线研究不同掺杂浓度的GaAs对势垒高度和影响因子的影响
在金属Au与半导体GaAs中故意用原子层沉积技术（ALD）插入一层MgO绝缘层
唐吉龙 2
故意在金属与半导体之间生长一层界面层可以改善器件的性质
4、 State Key Laboratory on High-Power Semiconductor Lasers,Changchun University of Science and Technology,130022
Ma Xiaohui 4, （ 1、 State Key Laboratory on High-Power Semiconductor Lasers,Changchun University of Science and Technology,130022
2、 State Key Laboratory on High-Power Semiconductor Lasers,Changchun University of Science and Technology,130022
5、 State Key Laboratory on High-Power Semiconductor Lasers,Changchun University of Science and Technology,130022
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