本文介绍了如何利用混合蚀刻工艺来解决实际生产过程中栅极蚀刻关键尺寸的控制问题
还有在同一个蚀刻腔内生产不同产品
研究蚀刻机台在实际生产芯片过程中蚀刻腔内部的环境以及它是如何对蚀刻制程产生影响
关键词: 蚀刻腔条件
它可以减少生产过程中的缺陷
SiO2刻蚀
某些产品在大批量投产时的一些关键规格往往会和研发阶段的数据存在很大差异
而造成这种情况的出现是由于两者之间的反应腔环境的差异导致的
硬掩膜蚀刻 CAI HUI * ( School of Microelectronics, Shanghai Jiaotong University
) Abstract: Some critical spec of production was often not match with the design in fab, and the root cause was the difference of chamber condition
So to reveal the mechanism and detail effect of chamber wall condition and its impact on etching process was important
It can not only reduce the defect in the processing but also increase the production yield, reduce wafer scrap and cost down
This paper introduced how to use mixing process to well control gate etch CD
Keywords: chamber condition, CD, SiO2 etch, hardmask etch 下载PDF阅读器 PDF全文下载: 初稿 ( 154 ) 作者简介: 通信联系人: 【收录情况】 中国科技论文在线: 蔡辉
混合蚀刻工艺中栅关键尺寸的控制[EB/OL]